- 您現在的位置：買賣IC網 > PDF目錄48376 > ATF-10136-TR1 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET PDF資料下載
參數資料
| 型號： | ATF-10136-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | CERAMIC, 36, MICRO-X-4 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 46K |
| 代理商： | ATF-10136-TR1 |
5-23
0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
Low Noise Figure:
0.5 dB Typical at 4 GHz
Low Bias:
VDS=2V,IDS = 20mA
High Associated Gain:
13.0 dB Typical at 4 GHz
High Output Power:
20.0 dBm Typical P1 dB at 4 GHz
Cost Effective Ceramic
Microstrip Package
Tape-and Reel Packaging
Option Available [1]
ATF-10136
36 micro-X Package
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NFO
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
f = 2.0 GHz
dB
0.4
f = 4.0 GHz
dB
0.5
0.6
f = 6.0 GHz
dB
0.8
GA
Gain @ NFO; VDS = 2 V, IDS = 25 mA
f = 2.0 GHz
dB
16.5
f = 4.0 GHz
dB
12.0
13.0
f = 6.0 GHz
dB
11.0
P1 dB
Power Output @ 1 dB Gain Compression
f = 4.0 GHz
dBm
20.0
VDS = 4 V, IDS = 70 mA
G1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dB
12.0
gm
Transconductance: VDS = 2 V, VGS = 0 V
mmho
70
140
IDSS
Saturated Drain Current: VDS = 2 V, VGS = 0 V
mA
70
130
180
VP
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
V
-4.0
-1.3
-0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Description
The ATF-10136 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
premium noise figure makes this
device appropriate for use in the first
stage of low noise amplifiers operat-
ing in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
5965-8701E
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-13336-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-25570 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-36077TR1 | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36077-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-45100-GP6 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF10170 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 70MA I(DSS) | MICRO-X |
| ATF10235 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | SOT-173VAR |
| ATF10236 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF-10236 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF-10236-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
發布緊急采購，3分鐘左右您將得到回復。