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參數資料
| 型號： | ATF-10136-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | CERAMIC, 36, MICRO-X-4 |
| 文件頁數： | 2/3頁 |
| 文件大小： | 46K |
| 代理商： | ATF-10136-TR1 |
5-24
ATF-10136 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VDS
Drain-Source Voltage
V
+5
VGS
Gate-Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-7
IDS
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
430
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature[4]
°C
-65to+175
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.9 mW/
°C for
TCASE > 25°C.
4. Storage above +150
°C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175
°C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
ATF-10136 Typical Performance, T
A = 25°C
Thermal Resistance :
θ
jc = 350°C/W; TCH = 150°C
Liquid Crystal Measurement:
1
m Spot Size[5]
ATF-10136 Noise Parameters: V
DS = 2 V, IDS = 25 mA
Freq.
NFO
Γ
opt
GHz
dB
Mag
Ang
RN/50
0.5
0.35
0.93
12
0.80
1.0
0.4
0.85
24
0.70
2.0
0.4
0.70
47
0.46
4.0
0.5
0.39
126
0.36
6.0
0.8
0.36
-170
0.12
8.0
1.1
0.45
-100
0.38
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-10136-TR1
1000
7"
ATF-10136-STR
10
STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
FREQUENCY (GHz)
NF
O
(dB)
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2V, f = 4.0 GHz.
NF
O
(dB)
020
10
40
50
30
60
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
FREQUENCY (GHz)
GAIN
(dB)
2.0
1.5
1.0
0.5
0
18
15
12
9
6
G
A
(dB)
16
14
12
10
G
A
(dB)
2.0
6.0
4.0
8.0 10.0 12.0
1.5
1.0
0.5
0
GA
NFO
|S21|2
MSG
MAG
0.5
1.0
2.0
4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF10170 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 70MA I(DSS) | MICRO-X |
| ATF10235 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | SOT-173VAR |
| ATF10236 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF-10236 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
| ATF-10236-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz Low Noise Gallium Arsenide FET |
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