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參數(shù)資料
| 型號： | ATF-36077-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 47K |
| 代理商： | ATF-36077-TR1 |
5-78
ATF-36077 Typical Noise Parameters,
Common Source, ZO = 50 , VDS = 1.5 V, ID = 10 mA
Freq.
Fmin[1]
Γ
opt
Rn/Zo
GHz
dB
Mag.
Ang.
-
1
0.30
0.95
12
0.40
2
0.30
0.90
25
0.20
4
0.30
0.81
51
0.17
6
0.30
0.73
76
0.13
8
0.37
0.66
102
0.09
10
0.44
0.60
129
0.05
12
0.50
0.54
156
0.03
14
0.56
0.48
-174
0.02
16
0.61
0.43
-139
0.05
18
0.65
0.39
-100
0.09
Note:
1. The Fmin values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses
that will be encountered when matching to the optimum reflection coefficient (
Γ
opt) at
these frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at
2 GHz, 0.20 dB at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from
associated s parameters, packaged device measurements at 12 GHz, and die level
measurements from 6 to 18 GHz.
Part Number Ordering Information
Part Number
No. of Devices
Container
ATF-36077-TRl[2]
1000
7" Reel
ATF-36077-STR
10
strip
Note:
2. For more information, see “Tape and Reel Packaging for Semiconductor Devices,” in
“Communications Components” Designer‘s Catalog.
77 Package Dimensions
Figure 2. Maximum Available Gain,
Maximum Stable Gain and Insertion
Power Gain vs. Frequency. VDS = 1.5 V,
ID = 10 mA.
GAIN
(dB)
0
25
0
FREQUENCY (GHz)
816
20
15
10
5
4
12
S21
MSG MAG
1.02
(0.040)
.51
(0.020)
1.78
(0.070)
1.22
(0.048)
.53
(0.021)
5.28
(0.208)
.10
(0.004)
TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).
4
2
13
GATE
DRAIN
SOURCE
1.75
(0.069)
360
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-36077-TRL | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
| ATF-36163 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF36163BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 3V V(BR)DSS | 40MA I(D) | SOT-363 |
| ATF-36163-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-36163-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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