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參數資料
| 型號： | AUIRF1324L |
| 元件分類： | JFETs |
| 英文描述： | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, TO-262, 3 PIN |
| 文件頁數： | 1/13頁 |
| 文件大小： | 472K |
| 代理商： | AUIRF1324L |
03/29/2010
www.irf.com
1
HEXFET Power MOSFET
S
D
G
GD
S
Gate
Drain
Source
PD - 97483
AUIRF1324S
AUIRF1324L
D2Pak
AUIRF1324S
TO-262
AUIRF1324L
G
D
S
GD
S
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switch-
ing speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
VDSS
24V
RDS(on) typ.
1.3m
ID (Silicon Limited)
340Ac
ID (Package Limited)
195A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.50
°C/W
RθJA
Junction-to-Ambient (PCB Mounted, steady-state)
j
–––
40
Max.
340
240
1420
195
A
°C
300
-55 to + 175
± 20
2.0
270
See Fig. 14, 15, 22a, 22b
300
0.46
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| AUIRF1324STRR | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1324STRL | 195 A, 24 V, 0.00165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1404S | 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1404STRR | 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRF1324S | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1324S-7P | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1324S-7PTRL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET |
| AUIRF1324S-7PTRR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET |
| AUIRF1324STRL | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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