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參數資料
| 型號： | AUIRF1404S |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/13頁 |
| 文件大?。?/td> | 228K |
| 代理商： | AUIRF1404S |
AUIRF1404S
AUIRF1404L
HEXFET Power MOSFET
06/07/11
www.irf.com
1
PD -97680
Features
●
Advanced Planar Technology
●
Dynamic dV/dT Rating
●
175°C Operating Temperature
●
Fast Switching
●
Fully Avalanche Rated
●
Repetitive Avalanche Allowed up to Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
AUTOMOTIVE GRADE
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
GD
S
Gate
Drain
Source
D2Pak
AUIRF1404S
TO-262
AUIRF1404L
G
D
S
GD
S
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
i
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
i
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
i
PD @TA = 25°C
Maximum Power Dissipation
W
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
di
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery
ei
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case k
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB Mounted, steady-state) j
–––
40
3.8
200
5.0
20
A
°C
300
-55 to + 175
± 20
1.3
519
95
Max.
162
h
115
h
650
75
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
thatHEXFETpowerMOSFETsarewellknownfor,provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
VDSS
40V
RDS(on) typ.
3.5m
Ω
max.
4.0m
Ω
ID (Silicon Limited)
162Ah
ID (Package Limited)
75A
相關PDF資料 |
PDF描述 |
|---|---|
| AUIRF1404STRR | 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1404L | 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF1404STRL | 75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1404ZSTRR | 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF1404ZSTRL | 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRF1404S | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 75A TO-26 |
| AUIRF1404STRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1404STRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1404Z | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1404ZL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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