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參數資料
| 型號： | AUIRF1405ZL |
| 元件分類： | JFETs |
| 英文描述： | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件頁數： | 1/14頁 |
| 文件大小： | 313K |
| 代理商： | AUIRF1405ZL |
AUIRF1405ZS
AUIRF1405ZL
HEXFET Power MOSFET
07/01/2010
www.irf.com
1
AUTOMOTIVE GRADE
PD - 97486A
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to
Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design
are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine
to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
GD
S
Gate
Drain
Source
TO-262
AUIRF1405ZL
S
D
G
D
D2Pak
AUIRF1405ZS
S
D
G
D
V(BR)DSS
55V
RDS(on) max.
4.9m
ID
150A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.65
°C/W
RθJA
Junction-to-Ambient (PCB Mount, steady state)
i
–––
40
-55 to + 175
300
10 lbf
yin (1.1Nym)
230
1.5
± 20
Max.
150
110
600
420
270
See Fig.12a, 12b, 15, 16
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRF1405ZL-308 | 功能描述:MOSFET AUTOMOTIVE MOSFET 55V 75A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1405ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1405ZS-7P | 功能描述:MOSFET N-CH 55V 120A D2PAK-7 制造商:infineon technologies 系列:HEXFET? 包裝:管件 零件狀態:有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:55V 電流 - 連續漏極（Id）（25°C 時）:120A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:4.9 毫歐 @ 88A，10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 150μA 不同 Vgs 時的柵極電荷（Qg）:230nC @ 10V 不同 Vds 時的輸入電容（Ciss）:5360pF @ 25V 功率 - 最大值:230W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-7，D2Pak（6 引線+接片），TO-263CB 供應商器件封裝:D2PAK（7-Lead） 標準包裝:50 |
| AUIRF1405ZS-7TRL | 功能描述:MOSFET N-CH 55V 120A 制造商:infineon technologies 系列:HEXFET? 包裝:帶卷（TR） 零件狀態:有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:55V 電流 - 連續漏極（Id）（25°C 時）:120A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:4.9 毫歐 @ 88A，10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 150μA 不同 Vgs 時的柵極電荷（Qg）:230nC @ 10V 不同 Vds 時的輸入電容（Ciss）:5360pF @ 25V 功率 - 最大值:230W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-7，D2Pak（6 引線+接片），TO-263CB 供應商器件封裝:D2PAK（7-Lead） 標準包裝:800 |
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