欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: AUIRFR4105ZTR
元件分類: JFETs
英文描述: 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁數(shù): 1/14頁
文件大小: 317K
代理商: AUIRFR4105ZTR
AUIRFR4105Z
AUIRFU4105Z
HEXFET Power MOSFET
07/23/2010
www.irf.com
1
AUTOMOTIVE GRADE
PD - 97544
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
GD
S
Gate
Drain
Source
D-Pak
AUIRFR4105Z
I-Pak
AUIRFU4105Z
G
D
S
G
D
S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
3.12
RθJA
Junction-to-Ambient (PCB mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300
10 lbf
yin (1.1Nym)
48
0.32
± 20
Max.
30
21
120
46
29
See Fig.12a, 12b, 15, 16
V(BR)DSS
55V
RDS(on) max. 24.5m
ID
30A
相關PDF資料
PDF描述
AUIRFU4105Z 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
AUIRFR4105 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4105TRR 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4105TRL 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4105TR 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
相關代理商/技術參數(shù)
參數(shù)描述
AUIRFR4105ZTRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR4105ZTRR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR4292 制造商:International Rectifier 功能描述:"AUTOMOTIVE LOGIC LEVEL MOSFET 250V, 9.3A, 375 MOHM, 13 NC Q - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 250V 9.3A DPAK 制造商:International Rectifier 功能描述:Automotive Logic Le mOhm, 13 nC Qg, DPAK
AUIRFR4292TR 制造商:International Rectifier 功能描述:"AUTOMOTIVE LOGIC LEVEL MOSFET 250V, 9.3A, 375 MOHM, 13 NC Q - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 250V 9.3A DPAK 制造商:International Rectifier 功能描述:Automotive Logic Le mOhm, 13 nC Qg, DPAK
AUIRFR4292TRL 制造商:International Rectifier 功能描述:"AUTOMOTIVE LOGIC LEVEL MOSFET 250V, 9.3A, 375 MOHM, 13 NC Q - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 250V 9.3A DPAK 制造商:International Rectifier 功能描述:Automotive Logic Le mOhm, 13 nC Qg, DPAK
主站蜘蛛池模板: 怀安县| 武功县| 宝鸡市| 澎湖县| 娄底市| 襄汾县| 德清县| 休宁县| 贵溪市| 黎城县| 称多县| 陕西省| 绥德县| 汾西县| 广南县| 泰兴市| 银川市| 富锦市| 商南县| 石景山区| 正安县| 宁晋县| 天柱县| 东乌| 岚皋县| 遂宁市| 合水县| 高雄市| 吴桥县| 萍乡市| 平阳县| 镶黄旗| 宜川县| 皮山县| 石阡县| 讷河市| 屏东县| 宁津县| 青冈县| 泊头市| 寻乌县|