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參數資料
| 型號： | AUIRG4BC30U-SL |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 23 A, 600 V, N-CHANNEL IGBT, TO-262AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件頁數： | 1/13頁 |
| 文件大小： | 323K |
| 代理商： | AUIRG4BC30U-SL |
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
23
IC @ TC = 100°C
Continuous Collector Current
12
A
ICM
Pulsed Collector Current
92
ILM
Clamped Inductive Load Current
92
VGE
Gate-to-Emitter Voltage
± 20
V
EARV
Reverse Voltage Avalanche Energy
10
mJ
PD @ TC = 25°C
Maximum Power Dissipation
100
PD @ TC = 100°C
Maximum Power Dissipation
42
TJ
Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
AUIRG4BC30U-S
AUIRG4BC30U-SL
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
11/01/10
W
Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching,
>200 kHz in resonant mode
Industry standard D2Pak & TO-262 package
Lead-Free, RoHS Compliant
Automotive Qualified *
Typical Applications: SMPS, PFC
Benefits
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.2
°C/W
RθJA
Junction-to-Ambient, ( PCB Mounted,steady-state)**
–––
40
Thermal Resistance
www.irf.com
1
* * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
* Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
D2Pak
AUIRG4BC30U-S
TO-262
AUIRG4BC30U-SL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond
those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified
GC
E
Gate
Collector
Emitter
PD - 96335
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| AUIRG4PH50S | 功能描述:IGBT 晶體管 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| AUIRG4PH50S | 制造商:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSIS |
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