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參數(shù)資料
| 型號： | AV8050S |
| 廠商： | Avic Technology |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 68K |
| 代理商： | AV8050S |
@vic
AV
8050S
NPN EPITAXIAL SILICON TRANSISTOR
QW-R206-001,A
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The
@vic
AV
8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to
@vic AV
8550S
MARKING
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25
℃
)
Collector Current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BV
CBO
Collector-Emitter Breakdown Voltage
BV
CEO
Emitter-Base Breakdown Voltage
BV
EBO
Collector Cut-Off Current
I
CBO
Emitter Cut-Off Current
I
EBO
DC Current Gain(note)
hFE
1
hFE2
hFE3
Collector-Emitter Saturation Voltage
V
CE
(sat)
Base-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
SOT-23
1
3
2
1:EMITTER 2:COLLECTOR 3:BASE
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
VALUE
30
20
5
1
700
150
-65 ~ +150
UNIT
V
V
V
W
mA
°
C
°
C
TEST CONDITIONS
Ic=100
μ
A,I
E
=0
Ic=1mA,I
B
=0
I
E
=100
μ
A,Ic=0
V
CB
=30V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=1V,Ic=1mA
V
CE
=1V,Ic=150 mA
V
CE
=1V,Ic=500mA
Ic=500mA,I
B
=50mA
Ic=500mA,I
B
=50mA
V
CE
=1V,Ic=10mA
MIN
30
20
5
100
120
40
TYP
110
MAX
1
100
400
UNIT
V
V
V
uA
nA
0.5
1.2
1.0
V
V
V
D9
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| AV8550S | PNP EPITAXIAL SILICON TRANSISTOR |
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