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參數資料
| 型號： | AV945LT1 |
| 廠商： | Avic Technology |
| 英文描述： | TRANSISTOR（ NPN ） |
| 中文描述： | 晶體管（NPN）的 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 172K |
| 代理商： | AV945LT1 |
AV
945LT1
TRANSISTOR NPN
FEATURES
Power dissipation
P
CM
: 0.2 W
Collector current
I
CM
: 0.15 A
Collector-base voltage
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
otherwise specified
Tamb=25
to +150
Tamb=25
unless
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 1 A
I
E
=0
60
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 0.1mA
I
B
=0
50
V
Collector-emitter breakdown voltage
V
(BR)EBO
Ic= 100
A
I
B
=0
5
V
Collector cut-off current
I
CBO
V
CB
=60 V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CB
=45 V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 5V , I
C
=0
0.1
A
h
FE(1)
V
CE
= 6V, I
C
= 1mA
130
400
DC current gain
h
FE(2)
V
CE
= 6V, I
C
= 0.1mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=100 mA, I
B
= 10mA
0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=100 mA, I
B
= 10mA
1
V
Base-emitter voltage
V
BEF
I
E
= 310mA
1.4
V
Transition frequency
f
T
V
CE
=6V, I
C
= 10mA
f=
30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Unit : mm
SOT
1. BASE
23
2. EMITTER
3. COLLECTOR
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