- 您現在的位置：買賣IC網 > PDF目錄385127 > BCX41 (ZETEX PLC) NPN SILICON PLANAR MEDIUM POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | BCX41 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 800 mA, 125 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/1頁 |
| 文件大小： | 47K |
| 代理商： | BCX41 |
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
%
PARTMARKING DETAIL EK
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
V
CES
V
CEO
V
EBO
I
CM
I
C
I
B
P
TOT
T
j
:T
stg
125
V
Collector-Emitter Voltage
125
V
Emitter-Base Voltage
5
V
Peak Pulse Current
1
A
Continuous Collector Current
800
mA
Base Current
100
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
I
CES
100
10
nA
μ
A
μ
A
μ
A
V
CE
=100V
V
CE
=100V, T
amb
=150°C
Collector Cut-Off
Current
I
CEX
10
75
V
CE
=100V,V
BE
=0.2V,T
amb
=85°C
V
CE
=100V,V
BE
=0.2V,
T
amb
=125°C
V
EB
=4V
Emitter Cut-Off
Current
I
EBO
100
nA
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.9
V
I
C
=300mA, I
B
=30mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
1.4
V
I
C
=300mA, I
B
=30mA *
Static Forward
Current Transfer Ratio
h
FE
25
63
40
I
C
=10
0μ
A, V
CE
=1V
I
C
=100mA, V
CE
=1V *
I
C
=200mA, V
CE
=1V *
I
=10mA, V
CE
=5V
f =20MHz
Transition Frequency
f
T
100
MHz
Output Capacitance
C
obo
12
pF
V
CB
=10V, I
E
=I
e
=0, f =1MHz
* Measured under pulsed conditions. Pulse width = 300
μ
s. Duty cycle 2%
BCX41
1
3
2
3 - 33
相關PDF資料 |
PDF描述 |
|---|---|
| BCX5616 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| BCX70 | Small Signal Transistors (NPN)(小信號晶體管（NPN）) |
| BCY39A | SMALL SIGNAL PNP TRANSISTORS IN TO-5 |
| BCY57 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
| BCY79-IX | PNP SILICON TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BCX41_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF and Switching Transistor |
| BCX41E6327 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| BCX41E6327HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 125V 0.8A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR SW AF NPN SOT-23 制造商:Infineon Technologies 功能描述:Trans GP BJT NPN 125V 0.8A 3-Pin SOT-23 T/R |
| BCX41E6327T | 制造商:Infineon Technologies AG 功能描述:AF TRANS SOT23 T&R 3K |
| BCX41E6327XT | 功能描述:兩極晶體管 - BJT NPN Silicn AF/SWITCH TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。