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參數資料
| 型號： | BDW51C |
| 廠商： | 意法半導體 |
| 英文描述： | Silicon NPN Switching Transistors(硅NPN開關晶體管) |
| 中文描述： | 硅NPN開關晶體管（硅npn型開關晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 66K |
| 代理商： | BDW51C |
BDW51C
BDW52C
SILICON NPN SWITCHING TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
I
COMPLEMENTARY PNP - NPN DEVICES
I
HIGH CURRENT CAPABILITY
I
FAST SWITCHING SPEED
I
HIGH DC CURRENT GAIN
APPLICATIONS
I
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW51C is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended
for use in power linear and switching applications.
The complementary PNP is the BDW52C.
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BDW51C
BDW52C
100
100
100
5
15
20
7
125
-65 to 200
200
Unit
NPN
PNP
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (repetitive)
Base Current
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
V
V
V
V
A
A
A
W
o
C
o
C
1
2
TO-3
1/4
相關PDF資料 |
PDF描述 |
|---|---|
| BDW52C | Silicon NPN Switching Transistors(硅NPN開關晶體管) |
| BDW93CFI | Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管) |
| BDW94CFI | Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管) |
| BDW94CFP | Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管) |
| BDX53A | Complemetary Silicon Power Darlington Transistors(功率達林頓晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BDW52 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistor |
| BDW52A | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistor |
| BDW52B | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistor |
| BDW52C | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistor |
| BDW53 | 功能描述:達林頓晶體管 40W 4A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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