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參數資料
| 型號： | BF998RW |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 253K |
| 代理商： | BF998RW |
VISHAY
BF998 / BF998R / BF998RW
Vishay Semiconductors
Document Number 85011
Rev. 1.5, 31-Aug-04
www.vishay.com
1
19216
SOT-143
SOT-143R
SOT-343R
1
2
4
3
2
1
3
4
Electrostatic sensitive device.
Observe precautions for handling.
1
2
4
3
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
Integrated gate protection diodes
Low noise figure
Low feedback capacitance
High cross modulation performance
Low input capacitance
High AGC-range
High gain
Applications
Input and mixer stages in UHF tuners.
Mechanical Data
Typ:
BF998
Case:
SOT-143 Plastic case
Weight:
approx. 8.0 mg
Marking:
MO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
BF998R
Case:
SOT-143R Plastic case
Weight:
approx. 8.0 mg
Marking:
MOR
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
BF998RW
Case:
SOT-343R Plastic case
Weight:
approx. 6.0 mg
Marking:
WMO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source voltage
Test condition
Symbol
V
DS
I
D
± I
G1/G2SM
Value
12
Unit
V
Drain current
30
mA
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
10
mA
± V
G1S/G2S
P
tot
T
Ch
T
stg
7
V
Total power dissipation
T
amb
≤
60 °C
200
mW
Channel temperature
150
°C
Storage temperature range
- 65 to + 150
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| BF998RW-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin SOT-343R T/R |
| BF998T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF998W | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| BF998WR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FET |
| BF998WR T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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