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參數資料
型號: BFR182TF
廠商: VISHAY SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數: 1/5頁
文件大小: 171K
代理商: BFR182TF
BFR182TF
Vishay Semiconductors
Document Number 85101
Rev. 1.3, 28-Apr-05
www.vishay.com
1
2
1
3
Electrostatic sensitive device.
Observe precautions for handling.
16867
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applica-
tions.
Features
Small feedback capacitance
Low noise figure
High power gain
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Mechanical Data
Typ:
BFR182TF
Case:
SOT-490 Plastic case
Weight:
approx. 2.5 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Part
Marking
Package
BFR182TF
RG
SOT-490
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
15
Unit
V
Collector-emitter voltage
10
V
Emitter-base voltage
2
V
Collector current
35
mA
Base current
5
mA
Total power dissipation
T
amb
60 °C
200
mW
Junction temperature
150
°C
Storage temperature range
- 65 to + 150
°C
e3
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相關代理商/技術參數
參數描述
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