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參數資料
| 型號： | BFP93AW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 212K |
| 代理商： | BFP93AW |
VISHAY
BFP93A / BFP93AW
Vishay Semiconductors
Document Number 85020
Rev. 1.4, 03-Sep-04
www.vishay.com
1
SOT-143
SOT-343
1
2
4
3
2
1
3
4
13579
Electrostatic sensitive device.
Observe precautions for handling.
Silicon NPN Planar RF Transistor
Features
High power gain
Low noise figure
High transition frequency
Applications
RF amplifier up to GHz range.
Mechanical Data
Typ:
BFP93A
Case:
SOT-143 Plastic case
Weight:
approx. 8.0 mg
Marking:
FE
Pinning:
1 = Collector, 2 = Emitter
3 = Base, 4 = Emitter
Typ:
BFP93AW
Case:
SOT-343 Plastic case
Weight:
approx. 6.0 mg
Marking:
WFE
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Maximum Thermal Resistance
1)
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μ
m Cu
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
Unit
V
Collector-emitter voltage
12
V
Emitter-base voltage
2
V
Collector current
50
mA
Total power dissipation
T
amb
≤
60 °C
200
mW
Junction temperature
150
°C
Storage temperature range
-65 to +150
°C
Parameter
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
Junction ambient
1)
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