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| 型號(hào)： | BUK7108-40AIE |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchPLUS standard level FET |
| 中文描述： | N溝道TrenchPLUS標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管 |
| 封裝： | BUK7108-40AIE<SOT426 (D2PAK)|<<http://www.nxp.com/packages/SOT426.html<1<week 1, 2005,; |
| 文件頁(yè)數(shù)： | 1/15頁(yè) |
| 文件大小： | 201K |
| 代理商： | BUK7108-40AIE |
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BUK7108-40AIE
N-channel TrenchPLUS standard level FET
Rev. 03 — 19 February 2009
Product data sheet
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
[1]
Current is limited by power dissipation chip rating.
Quick reference
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 2
; see
Figure 3
;
Min
-
-
Typ
-
-
Max
40
117
Unit
V
A
[1]
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7
;
see
Figure 8
T
j
> -55 °C; T
j
< 175 °C;
V
GS
> 10 V
-
6
8
m
I
D
/I
sense
ratio of drain current
to sense current
450
500
550
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK7108-40AIE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7108-40AIE,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7109-75AIE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchPLUS standard level FET |
| BUK7109-75AIE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7109-75AIE,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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