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參數(shù)資料
| 型號： | BUL312FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 149K |
| 代理商： | BUL312FP |
BUL312FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
HIGH VOLTAGE CAPABILITY
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
I
FULLY CHARACTERIZED AT 125
o
C
I
LARGE RBSOA
I
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
I
HORIZONTAL DEFLECTION FOR TV
I
SMPS
I
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The BUL312FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
March 2004
TO-220FP
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
isol
Parameter
Value
1150
500
9
5
10
3
4
36
1500
Unit
V
V
V
A
A
A
A
W
V
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25
o
C
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
T
stg
T
j
-65 to 150
150
o
C
o
C
1/6
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