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參數資料
| 型號： | CM200E3U-12H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關使用絕緣型 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 50K |
| 代理商： | CM200E3U-12H |
Sep.1998
Dimensions
Inches
Millimeters
A
3.7
94.0
B
3.15±0.01
80.0±0.25
C
1.89
48.0
D
0.94
24.0
E
0.28
7.0
F
0.67
17.0
G
0.91
23.0
H
0.91
23.0
J
0.43
11.0
L
0.16
4.0
Dimensions
Inches
Millimeters
M
0.47
12.0
N
0.53
13.5
O
0.1
2.5
P
0.63
16.0
Q
0.98
25.0
R
1.18 +0.04/-0.02 30.0 +1.0/-0.5
S
0.3
7.5
T
0.83
21.2
U
0.16
4.0
V
0.51
13.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management
.
Features:
u
Low Drive Power
u
Low V
CE(sat)
u
Discrete Super-Fast Recovery
Free-Wheel Diode
u
High Frequency Operation
u
Isolated Baseplate for Easy
Heat Sinking
Application:
u
Brake
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM200E3U-12H is a
600V (V
CES
), 200 Ampere IGBT
Module.
Current Rating
Amperes
V
CES
Volts (x 50)
Type
CM
200
12
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
G
E2
E2
G2
C1
C2E1
A
B
G
F
C
V
2 - Mounting
Holes
(6.5 Dia.)
E
U
H
E2
C1
C2E1
C
3-M5 Nuts
D
J
L
N
M
P
P
Q
O
O
T
C
Measured
Point
R
S
T
TAB#110 t=0.5
相關PDF資料 |
PDF描述 |
|---|---|
| CM200E3U-12H | Chopper IGBTMOD 200 Amperes/600 Volts |
| CM200HA-24H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM200HA-24H | Single IGBTMOD 200 Amperes/1200 Volts |
| CM200TU-12F | 240 x 128 pixel format, CFL Backlight with power harness |
| CM200TU-12F | 240 x 128 pixel format, CFL Backlight with power harness |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CM200E3U-12H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM200E3U-24F | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM200E3Y12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 200A I(C) |
| CM200E3Y24E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C) |
| CM200EXS-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT 1200V 200A 1500W MODULE 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE 1.2KV 200A 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 200A 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 200A; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:1.5kW; Operating Temperature Min:-40C; Operating Temperature Max:150C; No. of Pins:8 ;RoHS Compliant: Yes 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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