欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: CSB1065
英文描述: TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
中文描述: 晶體管|晶體管|進步黨| 50V五(巴西)總裁| 3A條一(c)|至126
文件頁數: 1/3頁
文件大小: 58K
代理商: CSB1065
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSB1058
TO-92
BCE
Low Frequency Power Amplifier.
Complementary CSD1489
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
BVCBO
BVCEO
BVEBO
IC
PC
Tj, Tstg
VALUE
20
16
6.0
2.0
0.75
-55 to +150
UNIT
V
V
V
A
W
deg C
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE *
TEST CONDITION
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=16V, IE=0
VEB=6V, IC=0
VCE=2V, IC=0.1A
VCE=2V, IC=2A
IC=1A, IB=0.1A
MIN
20
16
6.0
-
-
100
40
-
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
2.0
0.2
400
-
0.3
UNIT
V
V
V
uA
uA
Collector Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
VCE(Sat)
V
ft
Cob
VCE=2V, IC=10mA,
VCB=10V, IE=0
f=1MHz
-
-
80
50
-
-
MHz
pF
hFE* Classification :
A 100-240;
B 200-400;
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
相關PDF資料
PDF描述
CSB1065N TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065P TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065Q TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065R TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1086 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126
相關代理商/技術參數
參數描述
CSB1065N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB1065R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-126
CSB-1083 制造商:Microsemi Corporation 功能描述:CHIP - Gel-pak, waffle pack, wafer, diced wafer on film
主站蜘蛛池模板: 福泉市| 登封市| 阿克苏市| 南宁市| 沈阳市| 岳西县| 福泉市| 邓州市| 错那县| 涡阳县| 景泰县| 抚宁县| 旺苍县| 石泉县| 拜城县| 济宁市| 绍兴县| 濮阳市| 噶尔县| 合阳县| 江山市| 教育| 津南区| 沈丘县| 绿春县| 那曲县| 甘孜| 集安市| 桓台县| 越西县| 永泰县| 肥乡县| 泰兴市| 定日县| 天等县| 岳阳县| 永宁县| 类乌齐县| 巴塘县| 淮北市| 屯门区|