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參數(shù)資料
| 型號： | CSB1116L |
| 英文描述： | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|進步黨| 50V五（巴西）總裁| 1A條一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 59K |
| 代理商： | CSB1116L |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSB1116
CSB1116A
TO-92
BCE
Audio Frequency Power Amplifier And Medium Speed Switching
Complementary CSD1616/1616A
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current DC
Collector Current Pulse
Collector Dissipation
Operating And Storage Junction
Temperature Range
*PW=10ms, duty Cycle=50%
SYMBOL
VCBO
VCEO
VEBO
IC
IC*
PC
Tj, Tstg
CSB1116
60
50
CSB1116A
80
60
UNIT
V
V
V
A
A
W
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Cut off Current
Emitter Cut off Current
DC Current Gain CSB1116
CSB1116A
ICBO
IEBO
hFE(1) *
VCB=60V, IE=0
VEB=6V, IC=0
IC=100mA, VCE=2V
-
-
-
-
100
100
600
400
-
0.70
0.35
1.2
nA
nA
135
135
81
0.60
-
-
hFE(2) *
VBE(on)*
VCE(Sat) * IC=1A, IB=50mA
VBE(Sat) * IC=1A, IB=50mA
IC=1A, VCE=2V
VCE=2V,IC=50mA
-
-
-
-
Base Emitter On Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V
V
V
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
ft
Cob
VCE=2V,IC=100mA,
VCB=10V, IE=0
f=1MHz
70
-
-
-
-
MHz
pF
25
SWITCHING TIMES
Turn on time
Storage time
Fall time
ton
tstg
tf
VCC=10V,IC=100mA
IB1=IB2=10mA,
VBE(off)2=3V
-
-
-
0.07
0.7
0.07
-
-
-
us
us
us
hFE(1) CLASSIFICATION CSB1116
Y: 135-270
G: 200-400
L: 300-600
*Pulse Test : PW=350us, Duty Cycle=2% Pulsed
0.75
55 to +150
6
1
2
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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