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參數(shù)資料
型號: CSC3930
廠商: Continental Device India Limited
英文描述: NPN SILICON PLANAR EPITAXIAL TRANSISTOR
中文描述: NPN硅外延平面晶體管
文件頁數(shù): 1/3頁
文件大小: 113K
代理商: CSC3930
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC3930
SOT-23
Formed SMD Package
Marking Symbol : V
Complementary CSA1532
Optimum for RF Amplification of FM/AM Radios
ABSOLUTE MAXIMUM RATINGS (T
a
=25oC)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
UNITS
V
V
V
mA
mW
oC
Storage Temperature
oC
Electrical Characterstics (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
SYMBOL
I
CBO
CONDITIONS
V
CB
= 10V, I
E
= 0
V
CB
= 10V,I
E
= -1mA
V
CB
=10V, I
E
= -1mA, f=200 MHz
V
CB
=10V, I
E
= -1mA, f = 5MHz
V
CB
=10V, I
E
= -1mA, f=2MHz
MIN
TYP
MAX
UNIT
μ
A
0.1
220
DC Current Gain
Transition Frequency
Noise Figure
Reverse Transfer Impedance
Common Emitter Reverse-
Transfer Capacitance
*h
FE
f
T
70
150
MHz
NF
Z
rb
4
dB
50
C
re
V
CE
=10V,Ic = 1mA,f=10.7 MHz
1.5
pF
*h
FE
Classification
Marking
B : 70 - 140
C : 110 - 220
VB
VC
VALUE
30
20
5
30
150
150
- 55 to +150
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
相關(guān)PDF資料
PDF描述
CSC3936 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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CSC5200F NPN SILICON POWER TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CSC3930B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
CSC3930C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
CSC3936 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CSC3936B 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CSC3936C 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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