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參數資料
型號: CY62157E
廠商: Cypress Semiconductor Corp.
英文描述: 8-Mbit (512K x 16) Static RAM
中文描述: 8兆位(為512k × 16)靜態RAM
文件頁數: 1/12頁
文件大小: 530K
代理商: CY62157E
8-Mbit (512K x 16) Static RAM
CY62157E MoBL
Cypress Semiconductor Corporation
Document #: 38-05695 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 27, 2007
Features
Very high speed: 45 ns
— Industrial: –40°C to +85°C
— Automotive-E: –40°C to +125°C
Wide voltage range: 4.5V–5.5V
Ultra low standby power
— Typical Standby current: 2
μ
A
— Maximum Standby current: 8
μ
A (Industrial)
Ultra low active power
— Typical active current: 1.8 mA @ f = 1 MHz
Ultra low standby power
Easy memory expansion with CE
1
, CE
2
and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Available in Pb-free 44-pin TSOP II and 48-ball VFBGA
package
Functional Description
[1]
The CY62157E is a high performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life
(MoBL
) in
portable applications such as cellular telephones. The device
Logic Block Diagram
also has an automatic power down feature that significantly
reduces power consumption when addresses are not toggling.
Place the device into standby mode when deselected (CE
1
HIGH or CE
2
LOW or both BHE and BLE are HIGH). The input
or output pins (IO
0
through IO
15
) are placed in a high
impedance state when:
Deselected (CE
1
HIGH or CE
2
LOW)
Outputs are disabled (OE HIGH)
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
Write operation is active (CE
1
LOW, CE
2
HIGH and WE
LOW)
To write to the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from IO pins (IO
0
through IO
7
), is
written into the location specified on the address pins (A
0
through A
18
). If Byte High Enable (BHE) is LOW, then data
from IO pins (IO
8
through IO
15
) is written into the location
specified on the address pins (A
0
through A
18
).
To read from the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
appear on IO
0
to IO
7
. If Byte High Enable (BHE) is LOW, then
data from memory appears on IO
8
to IO
15
. See the
“Truth
Table” on page 9
for a complete description of read and write
modes.
512K x 16
RAM Array
IO
0
–IO
7
R
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
COLUMN DECODER
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
OE
BLE
IO
8
–IO
15
WE
BHE
A
1
A
0
A
1
A
9
A
10
A
1
CE
2
CE
1
Power Down
Circuit
BHE
BLE
CE
2
CE
1
Notes
1. For best practice recommendations, please refer to the Cypress application note
AN1064, SRAM System Guidelines
.
相關PDF資料
PDF描述
CY62157ELL-45ZSXI 8-Mbit (512K x 16) Static RAM
CY62157ELL-55BVXE 8-Mbit (512K x 16) Static RAM
CY62157ELL-55ZSXE 8-Mbit (512K x 16) Static RAM
CY62158CV25 1024K x 8 MoBL Static RAM
CY62158CV25LL-70BAI 1024K x 8 MoBL Static RAM
相關代理商/技術參數
參數描述
CY62157ELL-45ZSXI 功能描述:靜態隨機存取存儲器 8M ULTRA LO PWR HI SPD 靜態隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62157ELL-45ZSXIT 功能描述:靜態隨機存取存儲器 8M ULTRA LO PWR HI SPD 靜態隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62157ELL-55BVXE 功能描述:靜態隨機存取存儲器 8M MOBL ULTRA Lo PWR HI SPD ASYNC 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62157ELL-55BVXET 功能描述:靜態隨機存取存儲器 8M MOBL ULTRA Lo PWR HI SPD ASYNC 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62157ELL-55ZSXE 功能描述:靜態隨機存取存儲器 8M MOBL ULTRA Lo PWR HI SPD ASYNC 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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