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參數(shù)資料
| 型號： | CY7C107D |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 1-Mbit (1M x 1) Static RAM |
| 中文描述： | 1兆位（1米× 1）靜態(tài)RAM |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 806K |
| 代理商： | CY7C107D |
CY7C107D
CY7C1007D
1-Mbit (1M x 1) Static RAM
Cypress Semiconductor Corporation
Document #: 38-05469 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 22, 2007
Features
Pin- and function-compatible with CY7C107B/CY7C1007B
High speed
— t
AA
= 10 ns
Low Active Power
— I
CC
= 80 mA @ 10 ns
Low CMOS Standby Power
— I
SB2
= 3 mA
2.0V Data Retention
Automatic power-down when deselected
CMOS for optimum speed/power
TTL-compatible inputs and outputs
CY7C107D available in Pb-free 28-pin 400-Mil wide Molded
SOJ package. CY7C1007D available in Pb-free 28-pin
300-Mil wide Molded SOJ package
Functional Description
[1]
The CY7C107D and CY7C1007D are high-performance
CMOS static RAMs organized as 1,048,576 words by 1 bit.
Easy memory expansion is provided by an active LOW Chip
Enable (CE) and tri-state drivers. These devices have an
automatic
power-down
feature
consumption by more than 65% when deselected. The output
pin (D
OUT
) is placed in a high-impedance state when:
Deselected (CE HIGH)
that
reduces
power
When the write operation is active (CE and WE LOW)
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. Data on the input pin (D
IN
) is written
into the memory location specified on the address pins (A
0
through A
19
).
Read from the device by taking Chip Enable (CE) LOW while
while forcing Write Enable (WE) HIGH. Under these condi-
tions, the contents of the memory location specified by the
address pins appears on the data output (D
OUT
) pin.
Logic Block Diagram
S
POWER
DOWN
CE
WE
A0
A1
A2
A3
A4
A5
A6
A7
A8
R
1M x 1
ARRAY
INPUT BUFFER
A
A
A
A
A
A
A
A
A
COLUMN DECODER
DIN
DOUT
A
A
Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at
www.cypress.com
.
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| CY7C107D-10VXI | 功能描述:靜態(tài)隨機存取存儲器 1M 512K IND FAST ASYNC 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C107D-10VXIT | 功能描述:靜態(tài)隨機存取存儲器 1M 512K IND FAST ASYNC 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1081DV33-12BAXI | 功能描述:靜態(tài)隨機存取存儲器 64MB (4Mx16) 3.3v 12ns 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1081DV33-12BAXIT | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1089DV33-12BAXI | 功能描述:靜態(tài)隨機存取存儲器 64-MbStatic RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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