欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: CY7C109-25VI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 128K x 8 Static RAM
中文描述: 128K X 8 STANDARD SRAM, 25 ns, PDSO32
封裝: 0.400 INCH, SOJ-32
文件頁數(shù): 1/12頁
文件大小: 232K
代理商: CY7C109-25VI
128K x 8 Static RAM
CY7C109
CY7C1009
Cypress Semiconductor Corporation
Document #: 38-05032 Rev. **
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised August 24, 2001
009
Features
High speed
—t
AA
= 10 ns
Low active power
—1017 mW (max., 12 ns)
Low CMOS standby power
—55 mW (max.), 4 mW (Low power version)
2.0V Data Retention (Low power version)
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE
1
, CE
2
, and OE options
Functional Description
The CY7C109 / CY7C1009 is a high-performance CMOS stat-
ic RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW chip enable (CE
1
), an
active HIGH chip enable (CE
2
), an active LOW output enable
(OE), and three-state drivers. Writing to the device is accom-
plished by taking chip enable one (CE
1
) and write enable (WE)
inputs LOW and chip enable two (CE
2
) input HIGH. Data on
the eight I/O pins (I/O
0
through I/O
7
) is then written into the
location specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking chip en-
able one (CE
1
) and output enable (OE) LOW while forcing
write enable (WE) and chip enable two (CE
2
) HIGH. Under
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE
1
LOW, CE
2
HIGH, and WE LOW).
The CY7C109 is available in standard 400-mil-wide SOJ and
32-pin TSOP type I packages. The CY7C1009 is available in
a 300-mil-wide SOJ package. The CY7C1009 and CY7C109
are functionally equivalent in all other respects.
1
A
1
A
Logic Block Diagram
Pin Configurations
SOJ
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
2
I/O
1
I/O
2
I/O
3
512 x 256 x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
1
A
1
A
1
A
1
CE
1
A
1
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
19
18
20
24
23
22
21
25
28
27
26
Top View
29
32
31
30
16
17
GND
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
WE
A
13
A
8
A
9
A
11
V
CC
A
15
CE
2
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
109
1
NC
I/O
0
I/O
1
I/O
2
CE
1
OE
A
10
109
2
A
6
A
5
A
7
A
16
A
14
A
12
WE
CE
2
A
15
V
NC
A
4
A
13
A
8
A
9
OE
A
10
TSOP I
Top View
(not to scale)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
I/O
2
I/O
1
I/O
0
A
0
GND
I/O
7
I/O
6
I/O
4
I/O
3
I/O
5
CE
A
11
17
A
1
A
2
A
3
109
3
Selection Guide
7C109-10
7C1009-10
10
195
10
2
7C109-12
7C1009-12
12
185
10
2
7C109-15
7C1009-15
15
155
10
2
7C109-20
7C1009-20
20
140
10
7C109-25
7C1009-25
25
135
10
7C109-35
7C1009-35
35
125
10
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
Maximum CMOS Standby Current (mA)
Low Power Version
Shaded areas contain preliminary information.
相關PDF資料
PDF描述
CY7C109-35VC 128K x 8 Static RAM
CY7C109-35VI 128K x 8 Static RAM
CY7C1214F-100AC 1-Mb (32K x 32) Flow-Through Sync SRAM
CY7C1214F 1-Mb (32K x 32) Flow-Through Sync SRAM
CY7C1217H-100AXC 1-Mbit (32K x 36) Flow-Through Sync SRAM
相關代理商/技術參數(shù)
參數(shù)描述
CY7C109-25ZC 制造商:Cypress Semiconductor 功能描述:Static RAM, 128Kx8, 32 Pin, Plastic, TSSOP
CY7C109-35VC 制造商:Cypress Semiconductor 功能描述: 制造商:Cypress Semiconductor 功能描述:Static RAM, 128Kx8, 32 Pin, Plastic, SOJ
CY7C109B-123ZXC 制造商:Cypress Semiconductor 功能描述:
CY7C109B-12VC 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設備封裝:48-TSOP 包裝:托盤
CY7C109B-12ZXC 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
主站蜘蛛池模板: 开封县| 北宁市| 宣恩县| 洪江市| 凤阳县| 砀山县| 石家庄市| 开化县| 林州市| 湖口县| 锦屏县| 高邮市| 海伦市| 三亚市| 赫章县| 闸北区| 石泉县| 辉县市| 林周县| 策勒县| 韶关市| 白山市| 遂宁市| 涟水县| 平舆县| 天长市| 义乌市| 广南县| 吴桥县| 汶川县| 昭通市| 德格县| 全椒县| 梁河县| 武宁县| 密云县| 赤城县| 琼结县| 隆林| 绥棱县| 长春市|