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參數(shù)資料
| 型號(hào)： | CY7C1367B-225BGI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM |
| 中文描述： | 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
| 文件頁(yè)數(shù)： | 1/32頁(yè) |
| 文件大小： | 550K |
| 代理商： | CY7C1367B-225BGI |
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9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
CY7C1366B
CY7C1367B
Cypress Semiconductor Corporation
Document #: 38-05096 Rev. *B
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised February 23, 2004
Features
Supports bus operation up to 225 MHz
Available speed grades are 225, 200 and 166 MHz
Registered inputs and outputs for pipelined operation
Optimal for performance (Double-Cycle deselect)
— Depth expansion without wait state
3.3V –5% and +10% core power supply (V
DD
)
2.5V / 3.3V I/O operation
Fast clock-to-output times
—
2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-Ball fBGA packages
IEEE 1149.1 JTAG-Compatible Boundary Scan
“ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1366B/CY7C1367B SRAM integrates 262,144 x 36
and 524,288 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE
), depth-expansion Chip
Enables (CE
2
and
CE
and ADV), Write Enables (BW
, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the byte write control inputs. GW active LOW
causes all bytes to be written. This device incorporates an
additional pipelined enable register which delays turning off
the output buffers an additional cycle when a deselect is
executed.This feature allows depth expansion without penal-
izing system performance.
The CY7C1366B/CY7C1367B operates from a +3.3V core
power supply while all outputs operate with a +3.3V or a +2.5V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
[2]
), Burst Control inputs (ADSC, ADSP,
Selection Guide
225 MHz
2.8
250
30
200 MHz
3.0
220
30
166 MHz
3.5
180
30
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Notes:
1. For best–practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3
is for TQFP and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1367B-225BZC | 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM |
| CY7C1367B-225BZI | 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM |
| CY7C1370DV25 | 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)管道式SRAM（NoBL結(jié)構(gòu)）) |
| CY7C1370D | 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)管道式SRAM（NoBL結(jié)構(gòu)）) |
| CY7C1371C | 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1367C166AXC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1367C-166AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V COM Sync PL 2CD 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1367C-166AXCKJ | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1367C166AXCT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1367C-166AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V COM Sync PL 2CD 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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