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參數(shù)資料
| 型號(hào)： | CY7C1425AV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 36-Mb QDR-II SRAM（2-Word Burst結(jié)構(gòu)）(36-Mb QDR-II SRAM（2-Word Burst結(jié)構(gòu)）) |
| 中文描述： | 36 - MB的QDR - II型的SRAM（2字突發(fā)結(jié)構(gòu)）（36 - MB的QDR - II型的SRAM（2字突發(fā)結(jié)構(gòu)）） |
| 文件頁數(shù)： | 1/25頁 |
| 文件大小： | 1169K |
| 代理商： | CY7C1425AV18 |
36-Mbit QDR-II SRAM 2-Word Burst
Architecture
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Cypress Semiconductor Corporation
Document #: 38-05615 Rev. *D
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 09, 2007
Features
Separate Independent Read and Write data ports
— Supports concurrent transactions
250-MHz clock for high bandwidth
2-Word Burst on all accesses
Double Data Rate (DDR) interfaces on both Read and Write
ports (data transferred at 500 MHz) @ 250 MHz
Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight-time mismatches
Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
Single multiplexed address input bus latches address inputs
for both Read and Write ports
Separate Port Selects for depth expansion
Synchronous internally self timed writes
Available in x8, x9, x18, and x36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8V (±0.1V); IO V
DDQ
= 1.4V to V
DD
Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1410AV18 – 4M x 8
CY7C1425AV18 – 4M x 9
CY7C1412AV18 – 2M x 18
CY7C1414AV18 – 1M x 36
Functional Description
The CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and
CY7C1414AV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture
consists of two separate ports to access the memory array.
The Read port has dedicated Data Outputs to support Read
operations and the Write Port has dedicated Data Inputs to
support Write operations. QDR-II architecture has separate
data inputs and data outputs to completely eliminate the need
to “turn-around” the data bus required with common IO
devices. Access to each port is accomplished through a
common address bus. The Read address is latched on the
rising edge of the K clock and the Write address is latched on
the rising edge of the K clock. Accesses to the QDR-II Read
and Write ports are completely independent of one another. In
order to maximize data throughput, both Read and Write ports
are equipped with Double Data Rate (DDR) interfaces. Each
address location is associated with two 8-bit words
(CY7C1410AV18) or 9-bit words (CY7C1425AV18) or 18-bit
words (CY7C1412AV18) or 36-bit words (CY7C1414AV18)
that burst sequentially into or out of the device. While data can
be transferred into and out of the device on every rising edge
of both input clocks (K and K and C and C), memory bandwidth
is maximized while simplifying system design by eliminating
bus “turn-arounds.”
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self timed write circuitry.
Selection Guide
250 MHz
250
1065
200 MHz
200
870
167 MHz
167
740
Unit
MHz
mA
Maximum Operating Frequency
Maximum Operating Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1426AV18 | 36-Mbit QDR-II SRAM 4-Word Burst Architecture(4字Burst結(jié)構(gòu),36-Mbit QDR-II SRAM) |
| CY7C1427AV18 | 36-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu)，36-Mbit DDR-II SRAM) |
| CY7C1441AV33 | 36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM) |
| CY7C1443AV33 | 36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM) |
| CY7C1447AV33 | 36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1425AV18-167BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 4M X 9 0.5NS 165FBGA - Bulk |
| CY7C1425AV18-167BZXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx9 QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425AV18-200BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx9 QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425AV18-200BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 4M X 9 0.45NS 165FBGA - Bulk |
| CY7C1425AV18-200BZXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx9 QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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