| 型號 | 廠商 | 描述 |
| 1n4708 |
MICROSEMI CORP | surface mount silicon Zener diodes |
| 1n4691 |
GE Security, Inc. | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1n4695 |
GE Security, Inc. | PCV 5/ 8-G-7,62 |
| 1n4696 |
GE Security, Inc. | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1n4697 |
GE Security, Inc. | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1n4698 |
GE Security, Inc. | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1n4706 |
GE Security, Inc. | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1n4707 |
GE Security, Inc. | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1n4708 |
GE Security, Inc. | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1n4707 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓20V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4683 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓3.0V，最大反向電流0.8μA的硅外延平面型齊納二極管) |
| 1n4684 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓3.3V，最大反向電流7.5μA的硅外延平面型齊納二極管) |
| 1n4685 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓3.6V，最大反向電流7.5μA的硅外延平面型齊納二極管) |
| 1n4686 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓3.9V，最大反向電流5.0μA的硅外延平面型齊納二極管) |
| 1n4687 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓4.3V，最大反向電流4.0μA的硅外延平面型齊納二極管) |
| 1n4688 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓4.7V，最大反向電流10μA的硅外延平面型齊納二極管) |
| 1n4689 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓5.1V，最大反向電流10μA的硅外延平面型齊納二極管) |
| 1n4690 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓5.6V，最大反向電流10μA的硅外延平面型齊納二極管) |
| 1n4691 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓6.2V，最大反向電流10μA的硅外延平面型齊納二極管) |
| 1n4692 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓6.8V，最大反向電流10μA的硅外延平面型齊納二極管) |
| 1n4693 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓7.5V，最大反向電流10μA的硅外延平面型齊納二極管) |
| 1n4700 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓13V，最大反向電流0.05μA的硅外延平面型齊納二極管) |
| 1n4701 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓14V，最大反向電流0.05μA的硅外延平面型齊納二極管) |
| 1n4702 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓15V，最大反向電流0.05μA的硅外延平面型齊納二極管) |
| 1n4703 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓16V，最大反向電流0.05μA的硅外延平面型齊納二極管) |
| 1n4704 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓17V，最大反向電流0.05μA的硅外延平面型齊納二極管) |
| 1n4705 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓18V，最大反向電流0.05μA的硅外延平面型齊納二極管) |
| 1n4715 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓36V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4716 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓39V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4717 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓43V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4678 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓1.8V，最大反向電流7.5μA的硅外延平面型齊納二極管) |
| 1n4679 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓2.0V，最大反向電流5.0μA的硅外延平面型齊納二極管) |
| 1n4680 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓2.2V，最大反向電流4.0μA的硅外延平面型齊納二極管) |
| 1n4681 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓2.4V，最大反向電流2.0μA的硅外延平面型齊納二極管) |
| 1n4682 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓2.7V，最大反向電流1.0μA的硅外延平面型齊納二極管) |
| 1n4694 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓8.2V，最大反向電流1.0μA的硅外延平面型齊納二極管) |
| 1n4695 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓8.7V，最大反向電流1.0μA的硅外延平面型齊納二極管) |
| 1n4696 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓9.1V，最大反向電流1.0μA的硅外延平面型齊納二極管) |
| 1n4697 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓10V，最大反向電流1.0μA的硅外延平面型齊納二極管) |
| 1n4698 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓11V，最大反向電流0.05μA的硅外延平面型齊納二極管) |
| 1n4699 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓12V，最大反向電流0.05μA的硅外延平面型齊納二極管) |
| 1n4706 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓19V，最大反向電流0.05μA的硅外延平面型齊納二極管) |
| 1n4708 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓22V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4709 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓24V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4710 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓25V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4711 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓27V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4712 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓28V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4713 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓30V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4714 2 3 4 5 6 |
Vishay Intertechnology,Inc. | Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齊納電壓33V，最大反向電流0.01μA的硅外延平面型齊納二極管) |
| 1n4715 2 |
surface mount silicon Zener diodes |