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參數資料
型號: DF2S12FS
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.85 to 9.23; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
中文描述: 產品使用,但對靜電放電(ESD)保護。
文件頁數: 1/3頁
文件大小: 164K
代理商: DF2S12FS
DF2S12FS
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S12FS
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z
2terminal ultra small package suitable for mounting on small space.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
*
150
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*
: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm
Pad Dimension(Reference)
Unit: mm
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
I
Z
= 5 mA
11.4
12.0
12.6
V
Dynamic impedance
Z
Z
I
Z
= 5 mA
25
Reverse current
I
R
V
R
= 9 V
0.05
μ
A
Total capacitance
C
T
V
R
= 0 V, f = 1 MHz
15
pF
Unit: mm
0.6±0.05
0
0
C
0
0.2
±0.05
0.07
M
A
A
0.48
+0.02
-0.03
1
0.1±0.05
fSC
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
0.21
0.26
0.85
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