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參數資料
| 型號： | DF5A8.2JE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Product for Use Only as Protection against Electrostatic Discharge (ESD). |
| 中文描述： | 產品使用，但對靜電放電（ESD）保護。 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 171K |
| 代理商： | DF5A8.2JE |
DF5A8.2JE
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A8.2JE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
100
MW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
I
Z
= 5 mA
7.7
8.2
8.7
V
Dynamic impedance
Z
Z
I
Z
= 5 mA
―
―
20
Ω
Reverse current
I
R
V
R
= 6.5 V
―
―
0.5
μ
A
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
= 0, f = 1 MHz
―
38
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
30 kV
Criterion: No damage to device elements
Unit: mm
1.CATHODE1
2.ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
JEDEC
JEITA
TOSHIBA
1-2W1A
Weight: 0.003 g (typ.)
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