- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄376712 > DG646BH GTO Thyristors - Disc / Puk Devices PDF資料下載
參數(shù)資料
| 型號(hào)： | DG646BH |
| 英文描述： | GTO Thyristors - Disc / Puk Devices |
| 中文描述： | GTO晶閘管-光盤(pán)/北辰設(shè)備 |
| 文件頁(yè)數(shù)： | 2/19頁(yè) |
| 文件大小： | 219K |
| 代理商： | DG646BH |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
DG646BH25
2/19
SURGE RATINGS
Conditions
18.0
1.62 x 10
6
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
300
135
V/
μ
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
μ
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
I
TSM
Symbol
Parameter
I
2
t
V
= 1500V, I
T
= 2000A, T
j
= 125
o
C, I
FG
> 30A,
Rise time > 1.0
μ
s
A/
μ
s
To 66% V
DRM
; R
GK
≤
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
15
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
19
60
-
50
30
-
-
μ
s
100
100
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
μ
s
A/
μ
s
kW
W
A
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.045
-
0.006
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.018
o
C/W
Anode side cooled
o
C/W
0.03
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
22.0
18.0
-40
kN
o
C/W
Clamping force 20.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
L
S
Peak stray inductance in snubber circuit
nH
200
I
T
= 2000A, V
DM
= 2500V,-
j
= 125C,
di
GQ
/dt = 40A/
s, Cs = 2.0
μ
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DG646BH25 | Gate Turn-off Thyristor |
| DG648BH | GTO Thyristor - Asymmetric - Disc / Puk Devices |
| DG648BH45 | Gate Turn-off Thyristor |
| DG758BX | GTO Thyristor - Asymmetric - Disc / Puk Devices |
| DG758BX45 | ER 26C 26#16 SKT PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DG646BH25 | 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR |
| DG646BH25_05 | 制造商:DYNEX 制造商全稱(chēng):Dynex Semiconductor 功能描述:Gate Turn-off Thyristor |
| DG646BH25-125A | 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR |
| DG646BH25-148 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DG648BH | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:GTO Thyristor - Asymmetric - Disc / Puk Devices |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。