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參數資料
| 型號： | DIM125CHS06-S |
| 英文描述： | IGBT Modules - Half Bridge |
| 中文描述： | IGBT模塊-半橋 |
| 文件頁數： | 3/9頁 |
| 文件大小： | 169K |
| 代理商： | DIM125CHS06-S |
DIM1200DDM17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index): 175
AlN
AlSiC
20mm
10mm
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
18
40
8
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
-
-
-
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