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參數(shù)資料
| 型號： | DIM125CHS06-S |
| 英文描述： | IGBT Modules - Half Bridge |
| 中文描述： | IGBT模塊-半橋 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 169K |
| 代理商： | DIM125CHS06-S |
DIM1200DDM17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
μ
C
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1200
200
320
900
220
300
14
275
950
180
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= 1.2
R
G(OFF)
= 1.5
L ~ 100nH
I
F
= 1200A, V
R
= 900V,
dI
F
/dt = 5200A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1300
300
420
900
250
400
475
1150
320
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= 1.2
R
G(OFF)
= 1.5
L ~ 100nH
I
F
= 1200A, V
R
= 900V,
dI
F
/dt = 5200A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
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