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參數資料
| 型號： | DIM125CHS06-S |
| 英文描述： | IGBT Modules - Half Bridge |
| 中文描述： | IGBT模塊-半橋 |
| 文件頁數： | 6/9頁 |
| 文件大小： | 169K |
| 代理商： | DIM125CHS06-S |
DIM1200DDM17-E000
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
50
100
150
200
250
300
350
400
450
500
0
200
400
Collector current, I
C
- (A)
600
800
1000
1200
S
s
E
on
E
off
E
rec
Conditions:
T
case
= 125oC
V
cc
= 900V
R
g(on)
= 1.2 ohms
R
g(off)
= 1.5 ohms
0
500
1000
1500
2000
0
6
10
Gate resistance, R
g
- (ohms)
S
s
2
4
8
Conditions:
T
case
= 125oC
I
C
= 1200A
V
cc
= 900V
E
on
E
off
E
rec
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
C
C
V
ge
= 10V
V
ge
= 12V
V
ge
= 15V
V
ge
= 20V
Common emitter
T
case
= 125C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0
0.5
1.0
Collector-emitter voltage, V
ce
- (V)
1.5
2.0
2.5
3.0
3.5
4.0
C
C
V
ge
= 10V
V
ge
= 12V
V
ge
= 15V
V
ge
= 20V
Common emitter
T
case
= 25C
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