| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| IPB06N03LAT | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | 0 | |
| BSS192PE6327T | Infineon Technologies | MOSFET P-CH 250V 190MA SOT-89 | 0 | |
| BSS192PE6327T | Infineon Technologies | MOSFET P-CH 250V 190MA SOT-89 | 0 | |
| BSP317PE6327T | Infineon Technologies | MOSFET P-CH 250V 430MA SOT223 | 0 | |
| BSP317PE6327T | Infineon Technologies | MOSFET P-CH 250V 430MA SOT223 | 0 | |
| BSP316PE6327T | Infineon Technologies | MOSFET P-CH 100V 680MA SOT223 | 0 | |
| BSP316PE6327T | Infineon Technologies | MOSFET P-CH 100V 680MA SOT223 | 0 | |
| BSP295E6327T | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | 0 | 1:$0.94000 10:$0.75500 100:$0.56620 1,000:$0.32504 |
| BSP295E6327T | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | 0 | 1,000:$0.32504 5,000:$0.29358 10,000:$0.28834 |
| BSP171PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
| BSP171PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
| BSP170PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
| BSP170PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 | 0 | |
| BSP129E6327T | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | 0 | |
| BSP129E6327T | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 | 0 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續漏極(Id) @ 25° C: | 50A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 5.9 毫歐 @ 30A，10V |
| Id 時的 Vgs(th)（最大）: | 2V @ 40µA |
| 閘電荷(Qg) @ Vgs: | 22nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 2653pF @ 15V |
| 功率 - 最大: | 83W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應商設備封裝: | PG-TO263-3 |
| 包裝: | 帶卷 (TR) |