| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI4186DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 35.8A 8SOIC | 0 | 2,500:$0.49000 |
| IRLR120TRLPBF | Vishay Siliconix | MOSFET N-CH 100V 7.7A DPAK | 0 | 3,000:$0.48720 |
| SIR788DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 60A SO-8 | 0 | 3,000:$0.47600 6,000:$0.45220 15,000:$0.43350 30,000:$0.42160 75,000:$0.40800 |
| SIS476DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 40A 1212-8 PWR | 0 | 1:$1.29000 25:$1.02000 100:$0.91800 250:$0.79900 500:$0.71400 1,000:$0.56100 |
| SIS476DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 40A 1212-8 PWR | 0 | 3,000:$0.47600 6,000:$0.45220 15,000:$0.43350 30,000:$0.42160 75,000:$0.40800 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 35.8A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2.6 毫歐 @ 15A，10V |
| Id 時的 Vgs(th)（最大）: | 2.4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 90nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 3630pF @ 10V |
| 功率 - 最大: | 6W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |