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參數資料
| 型號： | F49L400UA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| 中文描述： | 4兆位（為512k × 8/256K × 16）3V時僅閃存的CMOS |
| 文件頁數： | 10/47頁 |
| 文件大小： | 397K |
| 代理商： | F49L400UA |
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EFS T
F49L400UA/F49L400BA
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.1 10/47
Table 5. F49L400UA/F49L400BA Software Command Definitions
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Command
Bus
Cycles
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset (5)
1
XXXH F0H
-
-
-
-
-
-
-
-
-
-
Read (4)
1
RA
RD
-
-
-
-
-
-
-
-
-
-
Word
4
555H AAH 2AAH
55H
555H
A0H
PA
PD
Program
Byte
4
AAAH AAH 555H
55H
AAAH
A0H
PA
PD
Word
6
555H AAH 2AAH
55H
555H
80H
555H
AAH
2AAH 55H
555H
10H
Chip Erase
Byte
6
AAAH AAH 555H
55H
AAAH
80H
AAAH
AAH
555H
55H AAAH
10H
Word
6
555H AAH 2AAH
55H
555H
80H
555H
AAH
2AAH 55H
SA
30H
Sector Erase
Byte
6
AAAH AAH 555H
55H
AAAH
80H
AAAH
AAH
555H
55H
SA
30H
Sector Erase
Suspend (6)
1
XXXH B0H
-
-
-
-
-
-
-
-
-
-
Sector Erase Resume
(7)
1
XXXH 30H
-
-
-
-
-
-
-
-
-
-
Auto-select
See Table 6.
Notes:
1. X = don’t care
RA = Address of memory location to be read.
RD = Data to be read at location RA.
PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector.
2. Except Read command and Auto-select command, all command bus cycles are write operations.
3. The system should generate the following address patterns: 555H or 2AAH to address A10~A0 in word mode
/ AAAH or 555H to address A10~A-1 in byte mode.
4. Address bits A17–A11 are don’t cares.
5. No command cycles required when reading array data.
6. The Reset command is required to return to reading array data when device is in the auto-select mode, or if
DQ5 goes high(while the device is providing status data).
7. The system may read and program in non-erasing sectors, or enter the auto-select mode, when in the Erase
Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
8. The Erase Resume command is valid only during the Erase Suspend mode.
相關PDF資料 |
PDF描述 |
|---|---|
| F49L400UA-70T | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400UA-90T | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L800BA | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-70T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-90T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| F49L400UA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400UA-90T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L800BA | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-70TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
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