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參數資料
| 型號： | F49L400UA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| 中文描述： | 4兆位（為512k × 8/256K × 16）3V時僅閃存的CMOS |
| 文件頁數： | 14/47頁 |
| 文件大小： | 397K |
| 代理商： | F49L400UA |
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EFS T
The system must write the Erase Resume command
(address bits are “don’t care” as shown in Table 5) to
exit the erase suspend mode and continue the sector
erase operation. Further writes of the Resume
command are ignored. Another Erase Suspend
command can be written after the device has resumed
erasing.
Auto-select Command
F49L400UA/F49L400BA
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.1 14/47
The auto-select command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
Table 6 shows the address and data requirements. This
method is an alternative to that shown in Table 4, which
is intended for PROM programmers and requires V
ID
on address bit A9.
The auto-select command sequence is initiated by
writing two unlock cycles, followed by the auto-select
command. The device then enters the auto-select
mode, and the system may read at any address any
number of times, without initiating another command
sequence. The read cycles at address 04H, 08H, 0CH,
and 00H retrieves the EFST manufacturer ID. A read
cycle at address 01H retrieves the device ID. A read
cycle containing a sector address (SA) and the
address 02H returns 01H if that sector is protected, or
00H if it is unprotected. Refer to Tables 1 and 2 for
valid sector addresses.
The system must write the reset command to exit the
auto-select mode and return to reading array data.
7.3 Write Operation Status
The device provides several bits to determine the
status of a write operation: RY/
BY
, DQ7, DQ6,
DQ5, DQ3, DQ2, and. Table 7 and the following
subsections describe the functions of these bits.
RY/
BY
, DQ7, and DQ6 each offer a method for
determining whether a program or erase operation
is complete or in progress.
Table 7. Write Operation Status
Status
DQ7
(Note1)
DQ6
DQ5
(Note2)
DQ3
DQ2
RY/
BY
Embedded Program Algorithm
7
DQ
Toggle
0
N/A
No
Toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Reading Erase Suspended
Sector
Reading Non-Erase
Suspended Sector
1
No
Toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
In Progress
Erase Suspended Mode
Erase Suspend Program
7
DQ
Toggle
0
N/A
N/A
0
Embedded Program Algorithm
7
DQ
Toggle
1
N/A
No
Toggle
0
Embedded Erase Algorithm
0
Toggle
1
1
Toggle
0
Exceeded
Time Limits
Erase Suspend Program
7
DQ
Toggle
1
N/A
N/A
0
Notes:
1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum
timing limits. See “DQ5: Exceeded Timing Limits” for more information.
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| F49L400UA-70T | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400UA-90T | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L800BA | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-70T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| F49L400UA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400UA-90T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L800BA | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-70TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
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