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參數(shù)資料
| 型號： | FB15R06KL4B1 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Variable Capacitance Diode for Digital audio; Ratings VR (V): 15; Characteristics n: 3.25 to 3.70; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.20 to 7.80 C2.5 = 2.05 to 2.35; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 |
| 中文描述： | 19 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-26 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 293K |
| 代理商： | FB15R06KL4B1 |
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorlufig
preliminary
Modul Isolation/ module isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Diode Gleichrichter/ diode rectifier
min.
typ.
max.
Durchlaspannung
forward voltage
T
vj
= 150°C, I
F
=
15 A
V
F
-
0,8
-
V
Schleusenspannung
threshold voltage
T
vj
= 150°C
V
(TO)
-
0,61
-
V
Ersatzwiderstand
slope resistance
T
vj
= 150°C
r
T
-
11
-
m
Sperrstrom
reverse current
T
vj
= 150°C, V
R
=
800 V
I
R
-
5
-
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
AA'+CC'
-
11
-
m
Transistor Wechselrichter/ transistor inverter
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
15 A
15 A
V
CE sat
-
-
1,95
2,2
2,55
-
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
=
0,4mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
0,8
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
=20V, T
vj
=25°C
I
GES
-
-
400
nA
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
=
t
P
≤
10μs, V
GE
≤
15V, R
G
=
T
vj
≤
125°C, V
CC
=
dI/dt =
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
80 nH
300 V
68 Ohm
80 nH
68 Ohm
360 V
1000 A/μs
t
d,on
-
-
37
34
-
-
ns
ns
ns
ns
ns
ns
ns
ns
Anstiegszeit (induktive Last)
rise time (inductive load)
t
r
-
-
37
37
-
-
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
t
d,off
-
-
216
223
-
-
Fallzeit (induktive Last)
fall time (inductive load)
t
f
-
-
17
26
-
-
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
E
on
-
0,6
-
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
E
off
-
0,4
-
mJ
Kurzschluverhalten
SC Data
I
SC
-
60
-
A
mA
-
I
CES
-
5,0
V
GE
= 0V, T
vj
=25°C, V
CE
=
600V
2(12)
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