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參數資料
| 型號： | FB180SA10 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 137K |
| 代理商： | FB180SA10 |
Parameter
Max.
180
120
720
480
2.7
± 20
700
180
48
5.7
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
V
ISO
-55 to + 150
2.5
1.3
kV
Nm
FB180SA10
HEXFET
Power MOSFET
PD- 91651C
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.0065
W
I
D
= 180A
Fifth Generation, high current density HEXFETS are
paralled into a compact, high power module providing
the best combination of switching, ruggedized design,
very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial - industrial applications at power
dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT-
227 package contribute to its universal acceptance
throughout the industry.
2/1/99
Description
l
Fully Isolated Package
l
Easy to Use and Parallel
l
Very Low On-Resistance
l
Dynamic dv/dt Rating
l
Fully Avalanche Rated
l
Simple Drive Requirements
l
Low Drain to Case Capacitance
l
Low Internal Inductance
SOT-227
Absolute Maximum Ratings
Parameter
Typ.
–––
0.05
Max.
0.26
–––
Units
R
q
JC
R
q
CS
1
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
°C/W
Thermal Resistance
www.irf.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.0065Ohm;ID 180A;SOT-227;PD 480W;VGS +/-20 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 100V 180A 4-Pin SOT-227 制造商:Vishay Intertechnologies 功能描述:Single N-Channel 100 V 0.0065 Ohms Surface Mount Power Mosfet - SOT-227 制造商:Vishay Semiconductors 功能描述:N CH MOSFET, 100V, 180A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes |
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:HEXFET POWER MOSFET |
| FB180SA10PBF | 制造商:Vishay Semiconductors 功能描述:MOSFET N SOT-227 TUBE 10 |
| FB182503ELV1NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 - Trays 制造商:Infineon Technologies 功能描述:Infineon Technologies FB182503ELV1NP Interface Misc |
| FB182503ELV2NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 |
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