- 您現在的位置：買賣IC網 > PDF目錄375748 > FB180SA10 (International Rectifier) Power MOSFET PDF資料下載
參數資料
| 型號： | FB180SA10 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數： | 2/8頁 |
| 文件大小： | 137K |
| 代理商： | FB180SA10 |
FB180SA10
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
￡
180A, di/dt
￡
83A/μs, V
DD
￡
V
(BR)DSS
,
T
J
￡
150°C
Pulse width
￡
300μs; duty cycle
￡
2%.
Notes:
Starting T
J
= 25°C, L =43μH
R
G
= 25
W
, I
AS
= 180A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 180A, V
GS
= 0V
T
J
= 25°C, I
F
= 180A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
––– 300 450 ns
–––
2.6
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
1.3
V
3.9
μC
Source-Drain Ratings and Characteristics
A
180
720
Parameter
Min. Typ. Max. Units
100
–––
–––
0.093 –––
–––
––– 0.0065
2.0
–––
93
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
250
–––
40
–––
110
–––
45
–––
351
–––
181
–––
335
–––
5.0
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 108A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 108A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 180A
V
DS
= 80V
V
GS
= 10.0V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 180A
R
G
= 2.0
W
(Internal)
R
D
= 0.27
W,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
W
V
S
4.0
–––
50
500
200
-200
380
60
165
–––
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
s
nC
nH
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 10700 –––
–––
2800 –––
–––
1300 –––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
相關PDF資料 |
PDF描述 |
|---|---|
| FB250-C1000G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
| FB125-C1000G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
| FB380-C1000G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
| FB40 | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
| FB40-C1000G | FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.0065Ohm;ID 180A;SOT-227;PD 480W;VGS +/-20 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 100V 180A 4-Pin SOT-227 制造商:Vishay Intertechnologies 功能描述:Single N-Channel 100 V 0.0065 Ohms Surface Mount Power Mosfet - SOT-227 制造商:Vishay Semiconductors 功能描述:N CH MOSFET, 100V, 180A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes |
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:HEXFET POWER MOSFET |
| FB180SA10PBF | 制造商:Vishay Semiconductors 功能描述:MOSFET N SOT-227 TUBE 10 |
| FB182503ELV1NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 - Trays 制造商:Infineon Technologies 功能描述:Infineon Technologies FB182503ELV1NP Interface Misc |
| FB182503ELV2NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 |
發布緊急采購，3分鐘左右您將得到回復。