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參數資料
| 型號： | FB180SA10 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數： | 7/8頁 |
| 文件大小： | 137K |
| 代理商： | FB180SA10 |
FB180SA10
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
·
dv/dt controlled by R
G
·
Driver same type as D.U.T.
·
I
SD
controlled by Duty Factor "D"
·
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
·
Low Stray Inductance
·
Ground Plane
·
Low Leakage Inductance
Current Transformer
*
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.0065Ohm;ID 180A;SOT-227;PD 480W;VGS +/-20 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 100V 180A 4-Pin SOT-227 制造商:Vishay Intertechnologies 功能描述:Single N-Channel 100 V 0.0065 Ohms Surface Mount Power Mosfet - SOT-227 制造商:Vishay Semiconductors 功能描述:N CH MOSFET, 100V, 180A, SOT-227; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes |
| FB180SA10P | 制造商:Vishay Semiconductors 功能描述:HEXFET POWER MOSFET |
| FB180SA10PBF | 制造商:Vishay Semiconductors 功能描述:MOSFET N SOT-227 TUBE 10 |
| FB182503ELV1NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 - Trays 制造商:Infineon Technologies 功能描述:Infineon Technologies FB182503ELV1NP Interface Misc |
| FB182503ELV2NP | 制造商:Infineon Technologies AG 功能描述:RFP-LDMOS 9 |
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