- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375763 > FD800R33KF2C-K (INFINEON TECHNOLOGIES AG) Technische Information / technical information PDF資料下載
參數(shù)資料
| 型號(hào)： | FD800R33KF2C-K |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Technische Information / technical information |
| 中文描述： | 1300 A, 3300 V, N-CHANNEL IGBT |
| 封裝： | MODULE-9 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 263K |
| 代理商： | FD800R33KF2C-K |
1
Technische Information / technical information
FD800R33KF2C-K
IGBT-modules
IGBT-Module
prepared by: Jürgen Biermann
approved by: Christoph Lübke
date of publication: 2003-6-13
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
TY = -25°C
V
3300
3300
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C
T = 25°C
I òó
I
800
1300
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
1600
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
9,60
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
I = 800 A, V = 15 V, TY = 25°C
I = 800 A, V = 15 V, TY = 125°C
V ùèú
3,40
4,30
4,25
5,00
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 80,0 mA, V = V, TY = 25°C
Vúì
4,2
5,1
6,0
V
Gateladung
gate charge
V = -15 V ... +15 V, V = 1800V
Q
15,0
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
0,63
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
100
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
5,40
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 3300 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 800 A, V = 1800 V
V = ±15 V, Róò = 1,4 , C = 150 nF, TY = 25°C
V = ±15 V, Róò = 1,4 , C = 150 nF, TY = 125°C
tá óò
0,28
0,28
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 800 A, V = 1800 V
V = ±15 V, Róò = 1,4 , C = 150 nF, TY = 25°C
V = ±15 V, Róò = 1,4 , C = 150 nF, TY = 125°C
t
0,18
0,20
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 800 A, V = 1800 V
V = ±15 V, Ró = 1,8 , C = 150 nF, TY = 25°C
V = ±15 V, Ró = 1,8 , C = 150 nF, TY = 125°C
tá ó
1,55
1,70
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 800 A, V = 1800 V
V = ±15 V, Ró = 1,8 , C = 150 nF, TY = 25°C
V = ±15 V, Ró = 1,8 , C = 150 nF, TY = 125°C
t
0,20
0,20
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 800 A, V = 1800 V, L = 40 nH
V = ±15 V, Róò = 1,4 , C = 150 nF, TY = 25°C
V = ±15 V, Róò = 1,4 , C = 150 nF, TY = 125°C
Eóò
930
1450
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 800 A, V = 1800 V, L = 40 nH
V = ±15 V, Ró = 1,8 , C = 150 nF, TY = 25°C
V = ±15 V, Ró = 1,8 , C = 150 nF, TY = 125°C
Eó
870
1000
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 2500 V, Vèà = V -Lù ·di/dt
I
4000
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
13,0 K/kW
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
8,00
K/kW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FD800R33KF2 | IGBT-Module |
| FDA15N65 | 650V N-Channel MOSFET |
| FDA16N50 | 500V N-Channel MOSFET |
| FDA16N50_07 | 500V N-Channel MOSFET |
| FDA16N50_F109 | 500V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FD800R33KL2C-K_B5 | 功能描述:IGBT 模塊 N-CH 3.3KV 1.5KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FD807-03 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SCHOTTKY BARRIER DIODE |
| FD8-10 | 功能描述:電源變壓器 100VA 10V CT @ 10A Dual Primary RoHS:否 制造商:Triad Magnetics 功率額定值:12 VA 初級(jí)電壓額定值:115 V / 230 V 次級(jí)電壓額定值:12 V / 24 V 安裝風(fēng)格:SMD/SMT 一次繞組:Dual Primary Winding 二次繞組:Dual Secondary Winding 長(zhǎng)度:2.5 in 寬度:2 in 高度:1.062 in |
| FD8-12 | 功能描述:電源變壓器 100VA 12.6VCT @ 8.0A Dual Primary RoHS:否 制造商:Triad Magnetics 功率額定值:12 VA 初級(jí)電壓額定值:115 V / 230 V 次級(jí)電壓額定值:12 V / 24 V 安裝風(fēng)格:SMD/SMT 一次繞組:Dual Primary Winding 二次繞組:Dual Secondary Winding 長(zhǎng)度:2.5 in 寬度:2 in 高度:1.062 in |
| FD8-120 | 功能描述:電源變壓器 100VA 120VCT @ 0.85A Dual Primary RoHS:否 制造商:Triad Magnetics 功率額定值:12 VA 初級(jí)電壓額定值:115 V / 230 V 次級(jí)電壓額定值:12 V / 24 V 安裝風(fēng)格:SMD/SMT 一次繞組:Dual Primary Winding 二次繞組:Dual Secondary Winding 長(zhǎng)度:2.5 in 寬度:2 in 高度:1.062 in |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。