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參數資料
| 型號： | FDA50N50 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 48 A, 500 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PN, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 222K |
| 代理商： | FDA50N50 |
2004 Fairchild Semiconductor Corporation
FDH50N50 / FDA50N50 Rev. A
1
www.fairchildsemi.com
F
UniF E T
TM
FDH50N50 / FDA50N50
500V N-Channel MOSFET
Features
48A, 500V, R
DS(on)
= 0.105
@V
GS
= 10 V
Low gate charge ( typical 105 nC)
Low C
rss
( typical 45 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
! "
!
!
S
!
"
"
D
G
G
S
D
TO-247
FDH Series
G
S
D
TO-3P
FDA Series
Symbol
Parameter
FDH50N50/FDA50N50
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
48
30.8
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
192
A
Gate-Source voltage
±
20
V
Single Pulsed Avalanche Energy
(Note 2)
1868
mJ
Avalanche Current
(Note 1)
48
A
Repetitive Avalanche Energy
(Note 1)
62.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
625
5
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.2
°
C/W
°
C/W
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
Thermal Resistance, Junction-to-Ambient
--
40
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PDF描述 |
|---|---|
| FDH50N50 | 500V N-Channel MOSFET |
| FDA59N25 | 250V N-Channel MOSFET |
| FDA59N30 | 300V N-Channel MOSFET |
| FDA62N28 | 280V N-Channel MOSFET |
| FDA69N25 | 250V N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDA50N50_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDA50N50_NWUA002 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDA59N25 | 功能描述:MOSFET 250V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDA59N30 | 功能描述:MOSFET 500V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDA620005 | 功能描述:OSC 106.25MHZ 2.5V SMD RoHS:是 類別:晶體和振蕩器 >> 振蕩器 系列:SaRonix-eCera™ FD 標準包裝:1 系列:VG-4512CA 類型:VCXO 頻率:153.6MHz 功能:三態（輸出啟用） 輸出:LVPECL 電源電壓:3.3V 頻率穩定性:- 工作溫度:-40°C ~ 85°C 電流 - 電源（最大）:60mA 額定值:- 安裝類型:表面貼裝 尺寸/尺寸:0.276" L x 0.197" W（7.00mm x 5.00mm） 高度:0.071"（1.80mm） 封裝/外殼:6-SMD，無引線（DFN，LCC） 包裝:Digi-Reel® 電流 - 電源（禁用）（最大）:- 其它名稱:SER3790DKR |
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