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參數(shù)資料
| 型號： | FDB14N30 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 300V N-Channel MOSFET |
| 中文描述： | 14 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 280K |
| 代理商： | FDB14N30 |
2007 Fairchild Semiconductor Corporation
FDB14N30 Rev. A
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDB14N30
300V N-Channel MOSFET
Features
14A, 300V, R
DS(on)
= 0.29
Ω
@V
GS
= 10 V
Low gate charge ( typical 18 nC)
Low C
rss
( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
G
S
D
D
2
-PAK
FDB Series
Symbol
Parameter
FDB14N30
Unit
V
DSS
I
D
Drain-Source Voltage
300
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
14
8.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
56
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
330
mJ
Avalanche Current
(Note 1)
14
A
Repetitive Avalanche Energy
(Note 1)
14
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
140
1.12
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA*
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case
--
0.89
°
C/W
Thermal Resistance, Junction-to-Ambient*
--
40
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDB14N30TM | 功能描述:MOSFET 300V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB150N10 | 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB15N50 | 功能描述:MOSFET 15A 500V 0.38 Ohm N-Ch SMPS Pwr RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB15N50 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 500V 15A TO-263 |
| FDB15N50_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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