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參數資料
| 型號： | FDB14N30 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 300V N-Channel MOSFET |
| 中文描述： | 14 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | D2PAK-3 |
| 文件頁數： | 8/8頁 |
| 文件大小： | 280K |
| 代理商： | FDB14N30 |
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This datasheet contains the design specifications for product
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Rev. I24
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB14N30TM | 功能描述:MOSFET 300V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB150N10 | 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB15N50 | 功能描述:MOSFET 15A 500V 0.38 Ohm N-Ch SMPS Pwr RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB15N50 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 500V 15A TO-263 |
| FDB15N50_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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