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參數資料
| 型號： | FDB16AN08A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 75V, 58A, 16mз |
| 中文描述： | 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 4/11頁 |
| 文件大?。?/td> | 267K |
| 代理商： | FDB16AN08A0 |
2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0.1
1
10
100
1
10
100
500
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
0.01
0.1
1
10
100
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
1
10
100
0
25
50
75
100
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
0
25
50
100
0
1
2
3
4
75
V
GS
= 7V
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 10V
D
)
0.012
0.014
0.016
0.018
0.020
0.022
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=58A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
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