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參數資料
型號: FDB24AN06LA0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 60V, 36A, 24mohm
中文描述: 7.8 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁數: 4/11頁
文件大小: 248K
代理商: FDB24AN06LA0
2004 Fairchild Semiconductor Corporation
FDB24AN06LA0 / FDP24AN06LA0 Rev. A
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.1
1
10
100
1000
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMAREA MAY BE
DS(ON)
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
1
10
100
0.001
0.01
0.1
1
10
100
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
15
30
45
60
1
2
3
4
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
15
30
45
60
0
0.5
1.0
1.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 3.5V
V
GS
= 5V
10
20
30
40
50
2
4
6
8
10
I
D
= 5A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 40A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 40A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
相關PDF資料
PDF描述
FDP24AN06LA0 N-Channel PowerTrench MOSFET 60V, 36A, 24mohm
FDB2614 200V N-Channel PowerTrench MOSFET
FDB2710 250V N-Channel PowerTrench MOSFET
FDB33N25 250V N-Channel MOSFET
FDB33N25TM 250V N-Channel MOSFET
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