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參數資料
| 型號： | FDB5686 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 60V N-Channel PowerTrench⑩ MOSFET |
| 中文描述： | 60V的N溝道MOSFET的的PowerTrench⑩ |
| 文件頁數： | 2/16頁 |
| 文件大小： | 440K |
| 代理商： | FDB5686 |
FDP5680/FDB5680 Rev. C
Electrical Characteristics
T
c
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
V
DD
= 30 V, I
D
= 40A
90
mJ
40
A
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
60
V
60
mV/
°
C
V
DS
= 48 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
1
μ
A
nA
100
I
GSSR
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
2
2.5
-6.4
4
V
Gate Threshold Voltage
Temperature Coefficient
mV/
°
C
V
GS
= 10 V, I
D
= 20 A,
V
GS
= 10 V, I
D
= 20 A,T
J
= 125
°
C
V
GS
= 6 V, I
D
= 19 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 20 A
0.016
0.022
0.018
0.020
0.035
0.023
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
20
A
S
43
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1850
230
95
pF
pF
pF
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 1)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
15
9
35
16
33
6.5
7.5
27
18
56
26
46
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 30 V, I
D
= 20 A
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
(Note 1)
V
SD
Drain-Source Diode Forward
Voltage
40
1.2
A
V
V
GS
= 0 V, I
S
= 20 A
(Note 1)
0.9
≤
μ
≤
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| FDB5690 | 功能描述:MOSFET 60V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB5800 | 功能描述:MOSFET 60V N-Ch Logic PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB5800_F085 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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