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參數資料
| 型號： | FDB8874 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 21 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 2/11頁 |
| 文件大小： | 267K |
| 代理商： | FDB8874 |
2004 Fairchild Semiconductor Corporation
FDB8874 Rev. A2
F
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
R
G
Gate Resistance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain
“
Miller
”
Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Package current limitation is 80A.
2:
Starting T
= 25
°
C, L = 51uH, I
AS
= 64A, V
DD
= 27V, V
GS
= 10V.
3:
Pulse width = 100s.
4:
FDB8874_NL is lead free product. FDB8874_NL marking will appear on the reel label.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 40A, V
GS
= 10V
I
D
= 40A, V
GS
= 4.5V
I
D
= 40A, V
GS
= 10V,
T
J
= 175
o
C
1.2
-
-
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
0.0033 0.0047
0.0041 0.0060
-
0.0062 0.0080
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
3130
590
345
1.9
56
30
3.0
9.0
6.0
11
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 40A
I
g
= 1.0mA
72
38
4.0
-
-
-
V
DD
= 15V, I
D
= 40A
V
GS
= 10V, R
GS
= 4.7
-
-
-
-
-
-
-
217
-
-
-
-
118
ns
ns
ns
ns
ns
ns
10
135
45
34
-
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
I
SD
= 20A
I
SD
= 40A, dI
SD
/dt = 100A/
μ
s
I
SD
= 40A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
32
18
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關代理商/技術參數 |
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| FDB8876 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8878 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8880 | 功能描述:MOSFET NCH PWR TRNCH MOSFET 30V 54A 11.6 OHMS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8896_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
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