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參數資料
| 型號： | FDC6320C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N & P Channel , Digital FET |
| 中文描述： | 220 mA, 25 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 7/7頁 |
| 文件大小： | 100K |
| 代理商： | FDC6320C |
FDC6320C.Rev C
Typical Electrical Characteristics: P-Channel (continued)
Figure 18. Maximum Safe Operating Area.
Figure 17. Gate Charge Characteristics
.
Figure 20. Single Pulse Maximum Power
Dissipation.
Figure 19. Capacitance Characteristics
.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
Figure 21. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =See note 1b
T = 25°C
A
JA
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
Q , GATE CHARGE (nC)
-
G
V = -5V
-10
-15
I = -0.2A
0.1
0.3
1
2
5
10
15
25
1
2
3
5
10
15
25
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0 V
C ss
C ss
1
2
5
10
20
40
0.01
0.02
0.05
0.1
0.2
0.5
0.8
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
DC
1s
100ms
10ms
V = -2.7V
SINGLE PULSE
R =See Note 1b
T = 25°C
1ms
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6320C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6321C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
| FDC6321C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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